| PART |
Description |
Maker |
| BB302C |
Build in Biasing Circuit MOS FET IC VHF RF Amplifier
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| BB505M |
Build in Biasing Circuit MOS FET IC
|
Renesas Technology
|
| BB505C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation.
|
| BB502C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|
| BB102C |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier 在偏置电路场效应晶体管集成电路超高频射频放大器建
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| BB305M |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Hitachi Semiconductor
|
| BB501C BB501 BB5.1 |
Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier 内建偏置电路场效应晶体管集成电路超高甚高频射频放大器
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| BB505CES BB505C |
Transistors>Amplifiers/MOSFETs
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
RENESAS[Renesas Electronics Corporation]
|
| TBB1017 TBB1017SMTL-E |
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1016 TBB1016RMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB305C BB305CEW-TL-E |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
